SeriesZ-Rec®
PackageTray
Part StatusNot For New Designs
FET Type6 N-Channel (3-Phase Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C29.5A (Tc)
Rds On (Max) @ Id, Vgs98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id2.2V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs61.5nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds900pF @ 800V
Power - Max167W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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