Series-
PackageBox
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C395A (Tc)
Rds On (Max) @ Id, Vgs5.3mOhm @ 400A, 15V
Vgs(th) (Max) @ Id3.6V @ 92mA
Gate Charge (Qg) (Max) @ Vgs908nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds2450pF @ 800V
Power - Max-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device Package-

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