SeriesZ-FET™
PackageBulk
Part StatusActive
FET Type2 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C423A (Tc)
Rds On (Max) @ Id, Vgs5.7mOhm @ 300A, 20V
Vgs(th) (Max) @ Id2.3V @ 15mA (Typ)
Gate Charge (Qg) (Max) @ Vgs1025nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds11700pF @ 600V
Power - Max1660W
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule, Screw Terminals
Supplier Device PackageModule

RELATED PRODUCT

WAB300M12BM3
1200 V, 300 A HALF-BRIDGE MODULE
CAB400M12XM3
MOSFET 2 N-CH 1200V MODULE
CAB450M12XM3
1.2KV 450A SIC HALF BRIDGE MOD
CAS300M17BM2
MOSFET 2N-CH 1700V 325A MODULE
NX7002BKXBZ
MOSFET 2N-CH 60V 0.26A 6DFN
EM6K31GT2R
MOSFET 2N-CH 60V 0.25A EMT6
MCM2301-TP
P-CHANNEL,MOSFETS,DFN2020-6L PAC
PMCXB900UELZ
20 V, COMPLEMENTARY N/P-CHANNEL