SeriesZ-Rec®
PackageTray
Part StatusActive
FET Type2 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C325A (Tc)
Rds On (Max) @ Id, Vgs10mOhm @ 225A, 20V
Vgs(th) (Max) @ Id2.3V @ 15mA (Typ)
Gate Charge (Qg) (Max) @ Vgs1076nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds20000pF @ 1000V
Power - Max1760W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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