| Series | - |
| Package | Box |
| Part Status | Active |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V |
| Current - Continuous Drain (Id) @ 25°C | 450A |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 450A, 15V |
| Vgs(th) (Max) @ Id | 3.6V @ 132mA |
| Gate Charge (Qg) (Max) @ Vgs | 1330nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 38000pF @ 800V |
| Power - Max | 850W |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
