Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs950mOhm @ 800mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds160 pF @ 80 V
FET Feature-
Power Dissipation (Max)800mW (Ta), 6.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

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