Series-
PackageBulk
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C760mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs360mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs2.1 nC @ 4.5 V
Vgs (Max)±6V
Input Capacitance (Ciss) (Max) @ Vds156 pF @ 5 V
FET Feature-
Power Dissipation (Max)301mW (Tj)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-75, SOT-416
Package / CaseSC-75, SOT-416

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