SeriesHiPerFET™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)850 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs105mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs152 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4480 pF @ 25 V
FET Feature-
Power Dissipation (Max)890W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

RELATED PRODUCT

SCT2160KEC
SICFET N-CH 1200V 22A TO247
C2M0080120D
SICFET N-CH 1200V 36A TO247-3
UJ4C075018K3S
SICFET N-CH 750V 81A TO247-3
IPW65R037C6FKSA1
MOSFET N-CH 650V 83.2A TO247-3
UJ4C075018K4S
SICFET N-CH 750V 81A TO247-4
IXFH170N25X3
MOSFET N-CH 250V 170A TO247
IXFH16N120P
MOSFET N-CH 1200V 16A TO247AD
NTH4L040N120SC1
TRANS SJT N-CH 1200V 58A TO247-4
IXTT30N60L2
MOSFET N-CH 600V 30A TO268
IXTT40N50L2
MOSFET N-CH 500V 40A TO268