SeriesLinear L2™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs240mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs335 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10700 pF @ 25 V
FET Feature-
Power Dissipation (Max)540W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

RELATED PRODUCT

IXTT40N50L2
MOSFET N-CH 500V 40A TO268
UF3C065030T3S
MOSFET N-CH 650V 85A TO220-3
UF3C065030K3S
SICFET N-CH 650V 85A TO247-3
UJ3C065030K3S
MOSFET N-CH 650V 85A TO247-3
IXFK150N30X3
MOSFET N-CH 300V 150A TO264
TP65H035G4WS
GANFET N-CH 650V 46.5A TO247-3
IXTX32P60P
MOSFET P-CH 600V 32A PLUS247-3
IXTX40P50P
MOSFET P-CH 500V 40A PLUS247-3
IXTX90P20P
MOSFET P-CH 200V 90A PLUS247-3
SIHG018N60E-GE3
MOSFET N-CH 600V 99A TO247AC