SeriesOptiMOS™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.8V @ 280µA
Gate Charge (Qg) (Max) @ Vgs223 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds16900 pF @ 40 V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

RELATED PRODUCT

IRFPF50PBF
MOSFET N-CH 900V 6.7A TO247-3
SIHB30N60E-GE3
MOSFET N-CH 600V 29A D2PAK
STW11NK100Z
MOSFET N-CH 1000V 8.3A TO247-3
STP8N120K5
MOSFET N-CH 1200V 6A TO220
IRFP4368PBF
MOSFET N-CH 75V 195A TO247AC
IPW65R095C7XKSA1
MOSFET N-CH 650V 24A TO247
IRFP4768PBF
MOSFET N-CH 250V 93A TO247AC
IMW65R107M1HXKSA1
MOSFET 650V NCH SIC TRENCH
IXTP6N50D2
MOSFET N-CH 500V 6A TO220AB
IPP023N10N5AKSA1
MOSFET N-CH 100V 120A TO220-3