SeriesCoolMOS™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs95mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2140 pF @ 400 V
FET Feature-
Power Dissipation (Max)128W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247
Package / CaseTO-247-3

RELATED PRODUCT

IRFP4768PBF
MOSFET N-CH 250V 93A TO247AC
IMW65R107M1HXKSA1
MOSFET 650V NCH SIC TRENCH
IXTP6N50D2
MOSFET N-CH 500V 6A TO220AB
IPP023N10N5AKSA1
MOSFET N-CH 100V 120A TO220-3
STW20NM50FD
MOSFET N-CH 500V 20A TO247-3
IPW60R060P7XKSA1
MOSFET N-CH 600V 48A TO247-3
IRFP31N50LPBF
MOSFET N-CH 500V 31A TO247-3
FDH44N50
MOSFET N-CH 500V 44A TO247-3
IXTH76P10T
MOSFET P-CH 100V 76A TO247
IXTH96P085T
MOSFET P-CH 85V 96A TO247