SeriesPOWER MOS 7®
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs950mOhm @ 6A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs71 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1969 pF @ 25 V
FET Feature-
Power Dissipation (Max)298W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 [B]
Package / CaseTO-247-3

RELATED PRODUCT

STW21N150K5
MOSFET N-CH 1500V 14A TO247
IPW65R045C7FKSA1
MOSFET N-CH 650V 46A TO247-3
STW88N65M5
MOSFET N-CH 650V 84A TO247-3
UJ3C120080K3S
SICFET N-CH 1200V 33A TO247-3
IPW60R041C6FKSA1
MOSFET N-CH 600V 77.5A TO247-3
SPW47N60C3FKSA1
MOSFET N-CH 650V 47A TO247-3
IXFK180N25T
MOSFET N-CH 250V 180A TO264AA
IXTH30N60L2
MOSFET N-CH 600V 30A TO247
NVBG020N090SC1
SICFET N-CH 900V 9.8A/112A D2PAK