SeriesMDmesh™ V
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs29mOhm @ 42A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs204 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds8825 pF @ 100 V
FET Feature-
Power Dissipation (Max)450W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

RELATED PRODUCT

UJ3C120080K3S
SICFET N-CH 1200V 33A TO247-3
IPW60R041C6FKSA1
MOSFET N-CH 600V 77.5A TO247-3
SPW47N60C3FKSA1
MOSFET N-CH 650V 47A TO247-3
IXFK180N25T
MOSFET N-CH 250V 180A TO264AA
IXTH30N60L2
MOSFET N-CH 600V 30A TO247
NVBG020N090SC1
SICFET N-CH 900V 9.8A/112A D2PAK
IXTT140P10T
MOSFET P-CH 100V 140A TO268
G2R1000MT33J
SIC MOSFET N-CH 4A TO263-7
UJ3C065030T3S
MOSFET N-CH 650V 85A TO220-3