Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)90 V
Current - Continuous Drain (Id) @ 25°C350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 24 V
FET Feature-
Power Dissipation (Max)6.25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-39
Package / CaseTO-205AD, TO-39-3 Metal Can

RELATED PRODUCT

2N6660
MOSFET N-CH 60V 410MA TO39
IMW120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-3
IXFH320N10T2
MOSFET N-CH 100V 320A TO247AD
IXTK180N15P
MOSFET N-CH 150V 180A TO264
IXFH80N65X2
MOSFET N-CH 650V 80A TO247
IPW65R041CFDFKSA1
MOSFET N-CH 650V 68.5A TO247-3
STW21N150K5
MOSFET N-CH 1500V 14A TO247
IPW65R045C7FKSA1
MOSFET N-CH 650V 46A TO247-3