| Image | PN / Manufacturer | Description | Quantity | Order |
|---|---|---|---|---|
 |
N-CHANNEL HERMETIC MOS HEXFET | 1499 | ||
 |
RF VERY HIGH FREQUENCY BAND, N-C | 1218 | ||
 |
DUAL BI-FET OP-AMP IC | 1088 | ||
 |
RF VERY HIGH FREQUENCY BAND, N-C | 375 | ||
|
FET RF 65V 2.14GHZ NI-400 | 250 | ||
|
FET RF 68V 2.16GHZ NI-400S | 161 | ||
 |
FET RF 65V 2.17GHZ NI-780 | 126 | ||
 |
RF 2-ELEMENT, ULTRA HIGH FREQUE | 124 | ||
 |
FET RF 2CH 65V 1.99GHZ NI780HS-4 | 102 | ||
|
FET RF 68V 1.99GHZ NI-880S | 96 | ||
 |
RF ULTRA HIGH FREQUENCY BAND, N- | 94 | ||
|
RF N CHANNEL, MOSFET | 93 | ||
 |
RF POWER FIELD-EFFECT TRANSISTOR | 84 | ||
 |
FET RF 65V 1.66GHZ NI-780S | 82 | ||
|
FET RF 65V 1.93GHZ NI-880 | 80 | ||
|
RF S BAND, N-CHANNEL | 57 | ||
|
RF POWER FIELD-EFFECT TRANSISTOR | 56 | ||
 |
RF PFET, 1-ELEMENT, L BAND, SILI | 50 | ||
 |
RF PFET, 1-ELEMENT, S BAND, SILI | 32 | ||
 |
RF 2-ELEMENT, ULTRA HIGH FREQUEN | 27 |
