SeriesCoolSiC™+
PackageBulk
Part StatusObsolete
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)2A (DC)
Voltage - Forward (Vf) (Max) @ If1.7 V @ 2 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr35 µA @ 650 V
Capacitance @ Vr, F70pF @ 1V, 1MHz
Mounting TypeSurface Mount
Package / Case4-PowerTSFN
Supplier Device PackagePG-VSON-4
Operating Temperature - Junction-55°C ~ 175°C

RELATED PRODUCT

NTE585
D-SCHOTTKY 40V 1A
IDB15E60ATMA1
IDB15E60 - INDUSTRY 14
NTE587
D-SI 200V 1A ULTRA FAST
BYC8-600,127
DIODE GEN PURP 600V 8A TO220AC
IDB45E60
RECTIFIER DIODE, 71A, 600V
NTE156
RECT-SI 1000V 2A DO-15
IDB18E120
RECTIFIER DIODE, 31A, 1200V
IDB18E120ATMA1
RECTIFIER DIODE, 31A, 1200V