SeriesHEXFET®, StrongIRFET™
PackageTube
Part StatusDiscontinued at Digi-Key
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75 V
Current - Continuous Drain (Id) @ 25°C197A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs3.05mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs270 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10130 pF @ 25 V
FET Feature-
Power Dissipation (Max)294W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-7, D²Pak (6 Leads + Tab), TO-263CB

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