Series-
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs430mOhm @ 8A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs46.6 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 30 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 170W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P-3L
Package / CaseTO-3P-3, SC-65-3