SeriesHEXFET®
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Rds On (Max) @ Id, Vgs2.5mOhm @ 76A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs209 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8250 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 300W (Tc)
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageSUPER D2-PAK
Package / CaseSuper D2-Pak

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