Series*
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 15 V
Vgs (Max)+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds660 pF @ 600 V
FET Feature-
Power Dissipation (Max)113.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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