SeriesQFET®
PackageTube
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250 V
Current - Continuous Drain (Id) @ 25°C3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.1Ohm @ 1.55A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds420 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

RELATED PRODUCT

FQD19N10LTF
MOSFET N-CH 100V 15.6A DPAK
BUK9540-100A,127
MOSFET N-CH 100V 39A TO220AB
BUK7575-55A,127
MOSFET N-CH 55V 20.3A TO220AB
FQPF1N60
MOSFET N-CH 600V 900MA TO220F
IRF620B
N-CHANNEL POWER MOSFET
2SK1483-AZ
N-CHANNEL POWER MOSFET
FQU2N60CTLTU
N-CHANNEL POWER MOSFET
IRFIRF7314PBF
P-CHANNEL POWER MOSFET
RM18P100HDE
MOSFET P-CH 100V 18A TO263-2
IRFH7921TRPBF
IRFH7921 - HEXFET POWER MOSFET