Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3400 pF @ 25 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

RELATED PRODUCT

RM70P30LD
MOSFET P-CHANNEL 30V 70A TO252-2
RM15P55LD
MOSFET P-CHANNEL 55V 15A TO252-2
BUK6215-75C,118
MOSFET N-CH 75V 57A DPAK
SVD5865NLT4G
60V 0.019OHM N-CHANNEL MOSFET
IRLR2905PBF
HEXFET POWER MOSFET
BUK6215-75C,118-NEX
MOSFET N-CH 75V 57A DPAK
STL8N6F7
MOSFET N-CH 60V 36A POWERFLAT
NVTFS6H860NLTAG
MOSFET N-CH 80V 8.1A/30A 8WDFN
IRLR2705TRLPBF
MOSFET N-CH 55V 28A DPAK