Series-
PackageBulk
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs128mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds386 pF @ 10 V
FET Feature-
Power Dissipation (Max)463mW (Ta), 4.45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-236AB
Package / CaseTO-236-3, SC-59, SOT-23-3

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