Series | C3M™ |
Package | Tube |
Part Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1000 V |
Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 155mOhm @ 15A, 15V |
Vgs(th) (Max) @ Id | 3.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs | 21.5 nC @ 15 V |
Vgs (Max) | +15V, -4V |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 600 V |
FET Feature | - |
Power Dissipation (Max) | 83W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK-7 |
Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |