| Series | C2M™ |
| Package | Tube |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 28A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 277W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
