| Series | C3M™ |
| Package | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 55.8A, 15V |
| Vgs(th) (Max) @ Id | 3.6V @ 15.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 188 nC @ 15 V |
| Vgs (Max) | +15V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 5011 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 416W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
