SeriesHiPerFET™
PackageTray
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C1220A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.35mOhm @ 932A, 10V
Vgs(th) (Max) @ Id4V @ 64mA
Gate Charge (Qg) (Max) @ Vgs2520 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageY3-Li
Package / CaseY3-Li

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