SeriesHiPerFET™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs320mOhm @ 16A, 10V
Vgs(th) (Max) @ Id6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs195 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds9940 pF @ 25 V
FET Feature-
Power Dissipation (Max)1250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS247™-3
Package / CaseTO-247-3

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