Series-
PackageTube
Part StatusLast Time Buy
FET TypeN-Channel
TechnologyGaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs130mOhm @ 13A, 8V
Vgs(th) (Max) @ Id2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs14 nC @ 8 V
Vgs (Max)±18V
Input Capacitance (Ciss) (Max) @ Vds760 pF @ 400 V
FET Feature-
Power Dissipation (Max)96W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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