SeriesMDmesh™ V
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs95mOhm @ 15A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs71 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 100 V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

RELATED PRODUCT

NTE2931
MOSFET N-CH 200V 12.8A TO3PML
MSC360SMA120S
MOSFET SIC 1200 V 360 MOHM TO-26
STP21N65M5
MOSFET N-CH 650V 17A TO220AB
STF28NM50N
MOSFET N-CH 500V 21A TO220FP
STP20NM60FP
MOSFET N-CH 600V 20A TO220FP
SK3991
N-CHANNEL POWER MOSFET
IPDD60R045CFD7XTMA1
MOSFET N-CH 600V 61A HDSOP-10
2SK1934-E
N-CHANNEL POWER MOSFET
G2R1000MT17J
SIC MOSFET N-CH 3A TO263-7