SeriesHiPerFET™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs310mOhm @ 6A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18.5 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1134 pF @ 25 V
FET Feature-
Power Dissipation (Max)180W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263AA
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

RELATED PRODUCT

IPDD60R090CFD7XTMA1
MOSFET N-CH 600V 33A HDSOP-10
SIHH125N60EF-T1GE3
MOSFET N-CH 600V 23A PPAK 8 X 8
NP88N055MHE-S18-AY
N-CHANNEL POWER MOSFET
NP88N055MLE-S18-AY
N-CHANNEL POWER MOSFET
TSM035NB04CZ
MOSFET N-CH 40V 18A/157A TO220
HAF2012-92L
N-CHANNEL POWER MOSFET
STI33N65M2
MOSFET N-CH 650V 24A I2PAK
2SK3229-E
N-CHANNEL POWER MOSFET
RJK1525DPP-MG#T2
N-CHANNEL POWER MOSFET