SerieseGaN®
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs16mOhm @ 10A, 5V
Vgs(th) (Max) @ Id2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs2.5 nC @ 5 V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds300 pF @ 20 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie Outline (5-Solder Bar)
Package / CaseDie

RELATED PRODUCT

R6004END3TL1
MOSFET N-CH 600V 4A TO252
BSC014NE2LSIATMA1
MOSFET N-CH 25V 33A/100A TDSON
SI7157DP-T1-GE3
MOSFET P-CH 20V 60A PPAK SO-8
IRFH5110TRPBF
MOSFET N-CH 100V 11A/63A 8PQFN
AUIRFZ34N
AUTOMOTIVE HEXFET N CHANNEL
BUZ30AH3045AATMA1
BUZ30 - SIPMOS POWER TRANSISTOR
BUZ30AHXKSA1
PFET, 21A I(D), 200V, 0.13OHM, 1
IPA180N10N3GXKSA1
28A, 100V, 0.018OHM, N-CHANNEL,
BSC146N10LS5ATMA1
MOSFET N-CH 100V 44A TDSON-8-6
IPLK60R360PFD7ATMA1
MOSFET N-CH 600V 13A THIN-PAK