SeriesCoolMOS™ CE
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs15.3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds328 pF @ 100 V
FET Feature-
Power Dissipation (Max)37W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251
Package / CaseTO-251-3 Stub Leads, IPak

RELATED PRODUCT

IRLR7807ZPBF
HEXFET POWER MOSFET
PSMN3R2-30YLC,115
ELEMENT, NCHANNEL, SILICON, MOSF
RQ5E050ATTCL
MOSFET P-CH 30V 5A TSMT3
BSZ0910LSATMA1
MOSFET N-CH 30V 18A/40A TSDSON
SQ3481EV-T1_BE3
MOSFET P-CHANNEL 30V 7.5A 6TSOP
SQ2319ADS-T1_BE3
MOSFET P-CH 40V 4.6A SOT23-3
SQ3457EV-T1_BE3
MOSFET P-CHANNEL 30V 6.8A 6TSOP