Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)450 V
Current - Continuous Drain (Id) @ 25°C500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.25Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.5 nC @ 10 V
Vgs (Max)±50V
Input Capacitance (Ciss) (Max) @ Vds240 pF @ 25 V
FET Feature-
Power Dissipation (Max)900mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA)

RELATED PRODUCT

BSL296SNH6327XTSA1
1.4A, 100V, 0.56OHM, N-CHANNEL,
MCH6341-TL-E
MOSFET P-CH 30V 5A 6MCPH
TBB1010KMTL-E
RF N-CHANNEL MOSFET
TBB1012MMTL-H
RF N-CHANNEL MOSFET
NTHD3133PFT1G
MOSFET P-CH 20V 3.2A CHIPFET
BSZ049N03LSCGATMA1
N-CHANNEL POWER MOSFET
TBB1010KMTL-H
RF N-CHANNEL MOSFET
TBB1005EMTL-H
RF N-CHANNEL MOSFET
NTD4969N-35G
MOSFET N-CH 30V 9.4A/41A IPAK
NDD03N60Z-1G
MOSFET N-CH 600V 2.6A IPAK