SeriesTrenchMOS™
PackageBulk
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs720 pC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds46 pF @ 15 V
FET Feature-
Power Dissipation (Max)360mW (Ta), 2.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDFN1006B-3
Package / CaseSC-101, SOT-883

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