SeriesOptiMOS™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.8V @ 184µA
Gate Charge (Qg) (Max) @ Vgs139 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10300 pF @ 50 V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

RELATED PRODUCT

IXFH22N60P3
MOSFET N-CH 600V 22A TO247AD
SIHG32N50D-GE3
MOSFET N-CH 500V 30A TO247AC
STP45N60DM2AG
MOSFET N-CH 600V 34A TO220
IXFP14N85X
MOSFET N-CH 850V 14A TO220AB
STW36N60M6
MOSFET N-CHANNEL 600V 30A TO247
IPW60R125C6FKSA1
MOSFET N-CH 600V 30A TO247-3
IPP60R090CFD7XKSA1
MOSFET N-CH 600V 25A TO220-3
IXTP180N10T
MOSFET N-CH 100V 180A TO220AB
FDA50N50
MOSFET N-CH 500V 48A TO3PN
STFW40N60M2
MOSFET N-CH 600V 34A ISOWATT