| Series | * |
| Package | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 18A, 20V |
| Vgs(th) (Max) @ Id | 5.8V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 20 V |
| Vgs (Max) | ±25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 800 V |
| FET Feature | Standard |
| Power Dissipation (Max) | 272W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P(N) |
| Package / Case | TO-3P-3, SC-65-3 |
