Series-
PackageBulk
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)16.5 V
Current - Continuous Drain (Id) @ 25°C500mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)2V, 5V
Rds On (Max) @ Id, Vgs1.5Ohm @ 300mA, 5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 15 V
FET Feature-
Power Dissipation (Max)1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92
Package / CaseTO-226-3, TO-92-3 (TO-226AA)

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