SeriesMDmesh™ II Plus
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs950mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.8 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds271 pF @ 100 V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

RELATED PRODUCT

IRFD220PBF
MOSFET N-CH 200V 800MA 4DIP
FDMC013P030Z
MOSFET P-CHANNEL 30V 54A 8MLP
IRF1010EPBF
MOSFET N-CH 60V 84A TO220AB
FDMS86101A
MOSFET N-CH 100V 13A/60A 8PQFN
FDPF3860T
MOSFET N-CH 100V 20A TO220F
SQJQ466E-T1_GE3
MOSFET N-CH 60V 200A PPAK 8 X 8
SI4434DY-T1-GE3
MOSFET N-CH 250V 2.1A 8SO
IRFBC20PBF
MOSFET N-CH 600V 2.2A TO220AB
IRF820PBF
MOSFET N-CH 500V 2.5A TO220AB
AUIRFR5410TRL
MOSFET P-CH 100V 13A DPAK