SeriesSTripFET™
PackageTube
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs22mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds770 pF @ 25 V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

RELATED PRODUCT

VN0106N3-G
MOSFET N-CH 60V 350MA TO92-3
SI3440DV-T1-E3
MOSFET N-CH 150V 1.2A 6TSOP
CSD18543Q3AT
MOSFET N-CH 60V 12A/60A 8VSON
FDD3672
MOSFET N-CH 100V 6.5/44A TO252AA
IRFZ24NPBF
MOSFET N-CH 55V 17A TO220AB
FQB1P50TM
MOSFET P-CH 500V 1.5A D2PAK
STD7N60M2
MOSFET N-CH 600V 5A DPAK
SIR616DP-T1-GE3
MOSFET N-CH 200V 20.2A PPAK SO-8
AOI4286
MOSFET N-CH 100V 4A/14A TO251A