Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Rds On (Max) @ Id, Vgs77mOhm @ 17A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs64 nC @ 5 V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 25 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

RELATED PRODUCT

FDB8832
MOSFET N-CH 30V 34A/80A TO263AB
IXTA08N100D2
MOSFET N-CH 1000V 800MA TO263
SI7439DP-T1-E3
MOSFET P-CH 150V 3A PPAK SO-8
SUM110P06-07L-E3
MOSFET P-CH 60V 110A TO263
SUM110N10-09-E3
MOSFET N-CH 100V 110A TO263
IRL2505PBF
MOSFET N-CH 55V 104A TO220AB
FDMS86550
MOSFET N-CH 60V 32A/155A POWER56
IRF5210PBF
MOSFET P-CH 100V 40A TO220AB
IRFBG30PBF
MOSFET N-CH 1000V 3.1A TO220AB