SeriesZ-REC™
PackageBulk
Part StatusObsolete
FET Type2 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C444A (Tc)
Rds On (Max) @ Id, Vgs4.3mOhm @ 400A, 20V
Vgs(th) (Max) @ Id4V @ 105mA
Gate Charge (Qg) (Max) @ Vgs1127nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max3000W
Operating Temperature175°C (TJ)
Mounting Type-
Package / CaseModule
Supplier Device PackageModule

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