Series-
PackageBulk
Part StatusActive
FET Type2 N Channel (Phase Leg)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C220A (Tc)
Rds On (Max) @ Id, Vgs12mOhm @ 150A, 20V
Vgs(th) (Max) @ Id2.4V @ 30mA (Typ)
Gate Charge (Qg) (Max) @ Vgs483nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds8400pF @ 1000V
Power - Max925W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP3
Supplier Device PackageSP3