SerieseGaN®
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusDiscontinued at Digi-Key
FET Type2 N-Channel (Half Bridge)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C9.5A
Rds On (Max) @ Id, Vgs14.5mOhm @ 20A, 5V
Vgs(th) (Max) @ Id2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 40V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

RELATED PRODUCT

EPC2101ENGRT
GAN TRANS ASYMMETRICAL HALF BRID
IRF120CECC
PFET, 9.2A I(D), 100V, 0.27OHM,
IRF7306PBF
AUTOMOTIVE HEXFET P-CHANNEL
IRFU024ATU
IRFU024A - 55V P-CHANNEL HEXFET
IPI60R199CP
COOLMOS N-CHANNEL POWER MOSFET
STS5DPF20L
MOSFET 2P-CH 20V 5A 8SOIC
PMGD8000LN,115
MOSFET 2N-CH 30V 0.125A 6TSSOP
PMWD26UN,518
MOSFET 2N-CH 20V 7.8A 8TSSOP
PMWD20XN,118
MOSFET 2N-CH 20V 10.4A 8TSSOP
STS4DNF30L
MOSFET 2N-CH 30V 4A 8SOIC