Series | Automotive, AEC-Q101 |
Package | Box |
Part Status | Active |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 640A (Tc) |
Rds On (Max) @ Id, Vgs | 2.97mOhm @ 480A, 15V |
Vgs(th) (Max) @ Id | 3.6V @ 160mA |
Gate Charge (Qg) (Max) @ Vgs | 15V |
Input Capacitance (Ciss) (Max) @ Vds | 800V |
Power - Max | - |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |