SeriesPOWER MOS 8™
PackageBulk
Part StatusActive
FET Type4 N-Channel (H-Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25°C19A
Rds On (Max) @ Id, Vgs552mOhm @ 16A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds6800pF @ 25V
Power - Max357W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP3
Supplier Device PackageSP3