SeriesHEXFET®
PackageBulk
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C4.7A
Rds On (Max) @ Id, Vgs50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds740pF @ 25V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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