Series-
PackageBulk
Part StatusObsolete
FET Type2 N-Channel (Half Bridge)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs34mOhm @ 30A, 8V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs28nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds2260pF @ 100V
Power - Max470W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseModule
Supplier Device PackageModule

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