Series-
PackageTube
Part StatusActive
FET Type2 N Channel (Phase Leg)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C337A (Tc)
Rds On (Max) @ Id, Vgs7.8mOhm @ 160A, 20V
Vgs(th) (Max) @ Id2.8V @ 4mA
Gate Charge (Qg) (Max) @ Vgs928nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds12.08pF @ 1000V
Power - Max1.409kW (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageSP3F