Series-
PackageBulk
Part StatusActive
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2.9A
Rds On (Max) @ Id, Vgs87mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds680pF @ 15V
Power - Max490mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UDFN Exposed Pad
Supplier Device Package6-HUSON-EP (2x2)

RELATED PRODUCT

PMDPB85UPE,115
NOW NEXPERIA PMDPB85UPE - SMALL
EFC6604R-TR
POWER FIELD-EFFECT TRANSISTOR, 2
EFC6605R-V-TR
NCH+NCH 10A 24V 2.5V DRIV
EFC2J013NUZTDG
DUAL N-CHANNEL POWER MOSFET 12V,
BSL214NH6327XTSA1
BSL214 - 250V-600V SMALL SIGNAL
FDY2000PZ
SMALL SIGNAL FIELD-EFFECT TRANSI
UPA602T-T2-A
SMALL SIGNAL FIELD-EFFECT TRANSI
FDG6306P
SMALL SIGNAL FIELD-EFFECT TRANSI
FDPC8014AS
25V ASYMMETRIC DUAL N-CHANNEL PO
FDMS8095AC
DUAL N & P-CHANNEL POWERTRENCH M